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 UTC 2SC2482
NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS
*HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS
1
FEATURES
*High Voltage :V(BR)CEO= 300V *Small Collector Output Capacitance: Cob=3.0pF(Typ.)
TO-92NL
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25C )
PARAMETER
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO Ic IB Pc Tj TSTG
LIMITS
300 300 7 100 50 900 150 -55 ~ +150
UNIT
V V V mA mA mW C C
ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified)
PARAMETER
Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage Transition Frequency Collector Output Capacitance
SYMBOL
ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob
TEST CONDITIONS
VCB=240V IE= 0 VEB= 7V Ic=0 VCE=10V,Ic=4mA VCE=10V,Ic=20mA Ic=10mA,IB=1mA Ic=10mA,IB=1mA VCE=10V, Ic=20mA VCB=20V, IE= 0, f=1MHz
MIN
TYP
MAX
1.0 1.0
UNIT
A A
20 30
150 1.0 1.0 3.0
50
V V MHz pF
UTC
UNISONIC TECHNOLOGIES
CO. LTD
1
QW-R211-015,A
UTC 2SC2482
NPN EPITAXIAL SILICON TRANSISTOR
hFE -Ic 500 DC Current Gain hFE 3 2 1 0.6 0.4 IB=0.2mA 300 Common Emitter Ta=25 V CE=20V
ELECTRICAL CHARACTERISTICS CURVES
Ic-V CE 4
Collector Current Ic (mA)
Common Emitter Ta=25 6 100 80 60 40 20 0 0
120
100 VCE =10V
50 30 10 0.3
VCE =5V 1 3 10 30 Collector Current Ic (mA) V CE(sat)-Ic Common Emitter Ta=25 100
4 8 12 16 Collector -Emitter Voltage Vc hFE -Ic
20
E(V)
24
500 300 DC Current Gain hFE
5 Collector-Emiitter Saturation Voltage V CE (sat)(V) 3 1
Common Emitter VCE =10V Ta=100
100
0.5 0.3 0.1
50 30 10 0.3
Ta=25
Ta=-25
IC/IB=10 2 1
5
1
10 30 3 Collector Current Ic (mA) VCE (sat)-Ic
100
0.05 0.3
10 30 3 Collector Current Ic (mA) V BE(sat)-Ic
100
Base-Emitter Saturation Voltage VBE(sat)(V)
Collector-Emiitter Saturation Voltage V CE(sat)(V)
5 3 1
5 3
Common Emitter IC/IB=5
Common Emitter Ta=25 IC/IB=5
1
0.5 0.3 0.1
Ta=100 Ta=-25 100
0.5 0.3 0.1 0.3
0.05 0.3
Ta=25 1
3 10 30 Collector Current Ic (mA)
1
10 30 3 Collector Current Ic (mA)
100
UTC
UNISONIC TECHNOLOGIES
CO. LTD
2
QW-R211-015,A
UTC 2SC2482
100 Collector Current Ic (mA) 80 60 Ta=100 40 20 0 0.2
NPN EPITAXIAL SILICON TRANSISTOR
Ic-V BE 500 Transition Frequency fT(MHz) fT -Ic 300 Common Emitter Ta=25
Common Emitter V CE=10 V
Ta=-25
100
V CE=20V
50 30 10 0.3
V CE=5V VCE =10V 1 3 10 30 Collector Current Ic (mA) 100
Ta=25 0.4 0.6 0.8 Base -Emitter Voltage V Safe Operating Area 1.0
BE(V)
1.2
300
Ic MAX.(PULSED)* Ic MAX.(CONINUOUS)
30 s* 50 Collector Output Capacitance Cob(pF) 1ms 10ms* Collector Current-Ic(mA) 100ms* 500ms* 30
Cob-V CB IE=0 f=1MHz Ta=25
Collector Current Ic(mA)
100
50 PT=1s DC Operation 30 Ta=25 10 5 2 3
10 5 3 1 1
*Single Nonrepetitive Pulse Ta=25 Curves Must Be Derated Linearly With Increase In Temperature VCEO MAX 10 30 100 300 Collector-Emitter Voltage V CE(V)
3
10
30
100
300
Collector-Base Voltage V CB(V)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES
CO. LTD
3
QW-R211-015,A


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